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| Datasheet File OCR Text: |
| ? so-8 top view 8 1 2 3 4 5 6 7 d d d d g s a s s a ! ! "# $ % & ' (#)( * 100% r g tested * +,-*, ' . ! / (# ( % 0! # 1 ' % 2 $ 3 '$ ( % ( ( ! ( / ( ( # ( +,-*, 4 *, 5 3% # ( ( 1 ' ( $ ( # ! ( # %% 2 6 $ '( ( ! ! ' / ( ( ' ( ' ( '! % ( % $ ' 5 ( # % %% 27 '% # ' 3'! % ( # $ ! ( %% ( ' (! ( $ ( % 2 % 5 ( ( # % % 3 (3 # ( 0! 24 ( % 8267 % $ % 4 9'! %% 2 symbol parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i dm p u l se d d ra i n c urrent p d @t a = 25c power dissipation w linear derating factor mw/c e as si n gl e p u l se a va l anc h e e ner g enc y mj dv/dt peak diode recovery dv/dt t j, t stg junction and storage temperature range symbol parameter typ max units r jl j unct i on-to- d ra i n l ea d ??? 20 r ja junction-to-ambient ??? 50 thermal resistance ratings absolute maximum ratings c/w v/ns c 9.2 5.0 0.02 260 -55 to +150 58 2.5 max 30 20 13 !" # i sd $ %& %'&( ( & ) *+, ! ) -*+,&.-/ 01 -* ? &2 -$ % !3 # 4 ' 5 ! " 367 ) /+, symbol parameter min typ max units v (br)dss drain-to-source breakdown voltage 30 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.034 ??? v/c ??? ??? 0.011 ??? ??? 0.018 v gs(th) gate threshold voltage 1.0 ??? 3.0 v g fs forward transconductance 10 ??? ??? s ??? ??? 1.0 ??? ??? 25 gate-to-source forward leakage ??? ??? -100 gate-to-source reverse leakage ??? ??? 100 q g total gate charge ??? 52 79 q gs gate-to-source charge ??? 6.1 9.2 nc q gd gate-to-drain ("miller") charge ??? 16 23 r g gate resistance 1.2 ??? 3.7 t d(on) turn-on delay time ??? 8.6 ??? t r rise time ??? 50 ??? t d(off) turn-off delay time ??? 52 ??? ns t f fall time ??? 46 ??? c iss input capacitance ??? 1800 ??? c oss output capacitance ??? 680 ??? c rss reverse transfer capacitance ??? 240 ??? symbol parameter min. typ. max. units continuous source current (body diode) a pulsed source current ( bod y diode ) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 74 110 ns q rr reverse recovery charge ??? 200 300 nc electrical characteristics @ tj = 25c (unless otherwise specified) source-drain ratings and characteristics v gs = 10v, see fig. 6 and 9 v dd = 15v i d = 7.3a v gs = -20v v gs = 20v conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma t j = 25c, i s = 7.3a, v gs = 0v t j = 25c, i f = 7.3a di/dt = 100a/s showing the integral reverse p-n junction diode. v gs = 10v, i d = 7.3a mosfet symbol v ds = 10v, i d = 3.7a i d = 7.3a v ds = 24v conditions r g = 2.0 ?, see fig. 10 v gs = 0v r g = 6.2 ? v ds = 25v ? = 1.0mhz, see fig. 5 r ds(on) v ds = v gs , i d = 250a v ds = 30v, v gs = 0v v ds = 24v, v gs = 0v, t j = 125c na ? v gs = 4.5v, i d = 3.7a static drain-to-source on-resistance i s i dss drain-to-source leakage current a i gss pf 3.1 ??? ??? i sm ??? ??? 58 1 10 100 0.1 1 10 20s pulse width t = 25c a j ds v , drain-to-source voltage (v) 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v d i , drain-to-source current (a) 1 10 100 0.1 1 10 a ds v , drain-to-source voltage (v) d i , drain-to-source current (a) 20s pulse width t = 150c j 3.0v vgs top 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v bottom 3.0v 1 10 100 3.0 3.5 4.0 4.5 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 10v 20s pulse width ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) v = 10v gs a i = 7.3a d 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms !" # $ $ 0 400 800 1200 1600 2000 2400 2800 3200 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 102030405060 q , total gate charge (nc) g v , gate-to-source voltage (v) gs a for test circuit see figure 9 i = 7.3a v = 24v v = 15v d ds ds 1 10 100 0.4 1.2 2.0 2.8 3.6 t = 25c t = 150c j j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) !"% & ' () #* v ds 90% 10% v gs t d(on) t r t d(off) t f +& ( ( 1 0.1 % ( ( 8 9 ) + - ,$ +& d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - q g q gs q gd v g charge -. $ !"#& % / ' & +& / ' & t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 100 200 300 400 500 600 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as o i d top bottom 3.3a 6.0a 7.3a 0%1 % p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - 2 ( -*(" . . 8 ( ? ? 8 8 9 ) ? 2 8 3 :8: ? 8 9 ) 68 9 ) , . , ? . ! 2 ? ; 4 ? . .<2 , ) " 2 so-8 package details so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rol l ing dime ns ion: mil l ime t e r 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dime ns ion doe s not incl u de mol d pr ot ru s ions . 6 dime ns ion doe s not incl u de mol d pr ot ru s ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070] example: this is an irf7101 (mosfet) int ernat ional rectifier logo f7101 yww xxxx part number lot code ww = we e k y = las t digit of t he year dat e code (yww) ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 11/03 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel |
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